RJK6024DPD switching equivalent, silicon n channel mos fet high speed power switching.
* Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)
* Low drive current
* High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 20.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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